# Semiconductor

• answer is a

• On applying forward bias to a $p-n$ junction diode,it increases number of donor on the $n$ - side, and decreases potential barrier. It also decreases electric field of depletion layer.

• Number of donors is more because electrons from -ve terminal of the cell pushes (enters) the n side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced. Then eutralised pentavalent atom are again in position to donate electrons.

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