Pooja kulhade last edited by
answer is a
On applying forward bias to a p−np-np−n junction diode,it increases number of donor on the nnn - side, and decreases potential barrier. It also decreases electric field of depletion layer.
Number of donors is more because electrons from -ve terminal of the cell pushes (enters) the n side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced. Then eutralised pentavalent atom are again in position to donate electrons.